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NCP606MN33T2G onsemi

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NCP606MN33T2G onsemi

Description : NCP606MN33T2G onsemi DFN-6

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Here is the English description of the NCP606MN33T2G chip:

  • Function: N-Channel Power MOSFET
  • Drain-Source Breakdown Voltage: 33V
  • Continuous Drain Current: 6A
  • On-Resistance: 3.3mΩ (typ)
  • Operating Temperature: -40°C to 150°C
  • Package: PowerSON-10 (3x3)

The NCP606MN33T2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Provides efficient 6A switching capability
  • Industry-leading low 3.3mΩ RDS(on) for minimal losses
  • Extended temperature range of -40°C to 150°C
  • PowerSON-10 package saves space on circuit boards

Common Applications:

  • Point-of-load DC/DC converters under 6A loads
  • Motor driver circuits requiring up to 6A
  • Industrial equipment demanding reliability

Benefits include high current switching with best-in-class low resistance, optimized for temperature robustness and footprint.

Well-suited for applications requiring precise 6A load control where extended temperature performance is critical.

In summary, the NCP606MN33T2G delivers reliable 6A switching with industry-leading efficiency across broad operating conditions.


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