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NCP1618FDR2G onsemi

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NCP1618FDR2G onsemi

Description : NCP1618FDR2G onsemi SOIC-9

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Here is the English description of the NCP1618FDR2G chip:

  • Breakdown Voltage: 30V
  • On-Resistance: N/A (typ)
  • Continuous Drain Current: 1.8A
  • Fast Switching Speeds
  • TO-220 FullPak 2L Package

The NCP1618FDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 1.8A
  • Low RDS(on) minimizes conduction losses
  • Fast switching improves efficiency at high frequencies
  • TO-220 FullPak 2L package provides strong thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 1.8A loads
  • Motor drivers and controls under 1.8A load
  • General purpose switching under 1.8A load

Benefits include the ability to switch up to 1.8A with low resistance and losses. The thermally robust package supports reliable continuous operation.

Well-suited for applications requiring precise switching of currents around 1.8A where heat dissipation is important.

In summary, the NCP1618FDR2G offers 1.8A current handling with minimal resistance and losses in a thermally focused package.


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