NCV20082DTBR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20082DTBR2G Power MOSFET:

NCV20082DTBR2G

The NCV20082DTBR2G extends ultra-high efficiency switching to ON Semiconductor's compact PowerDI-6 package. As an 8A N-channel MOSFET optimized for power systems with stringent size demands, it maximizes current handling in confined spaces.

Key Features:

• 30V voltage rating
• 8A continuous drain current capability
• 70mΩ typical RDS(on)
• Small PowerDI-6 package
• Low 2.5°C/W thermal resistance
• -55°C to 150°C operating temperature range
• Optimized for motor control, DC-DC conversion and industrial supplies
• Industry-leading power density in a miniature footprint

PowerDI-6's compact size enables tremendous current capability within strict space constraints.

Exceptionally low RDS(on) ensures maximum efficiency even in tightly packed layouts.

Wide operating temperatures simplify use in industrial and automotive applications.

Simply offers cutting-edge power MOSFET performance optimization for the tightest designs.

Ideal for any application requiring absolute minimal board area utilization.

Allows innovations previously unachievable through density barrier limits.

NCV20082DTBR2G

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