NCV20094DTBR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20094DTBR2G Power MOSFET:

NCV20094DTBR2G

The NCV20094DTBR2G Power MOSFET from ON Semiconductor extends ultra-high efficiency switching to ON Semiconductor's miniature PowerDI-6 package. As a 19A N-channel MOSFET optimized for power circuits with stringent size demands, it maximizes current in confined footprints.

Key Features:

• 30V voltage rating
• 19A continuous drain current capability
• 40mΩ typical RDS(on)
• Space-saving PowerDI-6 package
• Low 2.5°C/WθJA thermal resistance
• -55°C to 150°C operating temperature range
• Optimized for DC-DC conversion, motor control and solar microinverters
• Outstanding power density in an ultrasmall package

PowerDI-6's compact size enables industry-leading current handling within footprint constraints.

Exceptionally low RDS(on) ensures maximum efficiency even in tightly spaced layouts.

Reliable operation extended over automotive/industrial temperature ranges.

Simply provides leading power switching capability from minimal real estate.

Ideal for enabling designs requiring absolutely zero tolerance on board space.

Unlocks new potentials where millimeter-level optimization was previously impossible.

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NCV20094DTBR2G

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