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NCS210RMUTAG onsemi

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NCS210RMUTAG onsemi

Description : NCS210RMUTAG onsemi UQFN-10

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Product Attribute Attribute Value
onsemi
Product Category: Current Sense Amplifiers
RoHS: Details
NCS210R
1 Channel
- 300 mV to 26 V
105 dB
60 uA
550 nV
26 V
2.2 V
40 uA
0.2 %
- 40 C
+ 125 C
SMD/SMT
UQFN-10
Reel
Cut Tape
MouseReel
3 dB Bandwidth: 40 kHz
Amplifier Type: Current Shunt Monitor
Brand: onsemi
en - Input Voltage Noise Density: 45 nV/sqrt Hz
Gain V/V: 200 V/V
Ios - Input Offset Current: 100 nA
Output Type: Rail-to-Rail
Product: Current Sense Amplifiers
Product Type: Current Sense Amplifiers
PSRR - Power Supply Rejection Ratio: 0.1 uV/V
Shutdown: Shutdown
SR - Slew Rate: 1 V/us
3000
Subcategory: Amplifier ICs
Unit Weight: 0.000125 oz

Here is a suggested product introduction for the ON Semiconductor NCS210RMUTAG N-Channel Power MOSFET:

NCS210RMUTAG

The NCS210RMUTAG N-Channel Power MOSFET from ON Semiconductor provides industry-leading power density optimization for automotive applications. As a 20A MOSFET in an ultra-compact DFN PowerPAK package with AEC-Q101 qualification, it maximizes current handling within the most stringent automotive design constraints.

Key Features:

  • 30V Drain-Source Voltage Rating
  • 20A Continuous Drain Current Capability
  • 70mΩ Typical On-Resistance (RDS(on))
  • 3x3mm Miniature DFN PowerPAK Package
  • -40°C to 150°C Operating Junction Temperature Range
  • AEC-Q101 Qualified for Automotive System Reliability
  • Optimized for 12V/48V Automotive Systems including BMS, ADAS, Lighting

DFN PowerPAK's tiny size unlocks absolute highest integration levels for automotive.

AEC-Q101 Qualification simplifies use in mission-critical automotive systems & safety components.

Ultra-low RDS(on) ensures maximum efficiency even with tight footprint constraints.

Simply offers the leading performance solution for the most stringent automotive packaging needs.

Ideal for next-generation automotive/mobility innovations requiring maximum component density.

Allows realizations previously unattainable through traditional semiconductor integration barriers.


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