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DMG6602SVT-7

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DMG6602SVT-7

Description : DMG6602SVT-7 TSOT-26-6

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TSOT-26-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	3.4 A, 2.8 A
Rds On - Drain-Source Resistance:	100 mOhms, 140 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	840 mW
Channel Mode:	Enhancement
Series:	DMG6602
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Dual
Fall Time:	3 ns
Forward Transconductance - Min:	4 S
Product Type:	MOSFET
Rise Time:	5 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	3 ns
Unit Weight:	0.000282 oz

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